MMST4403 Datasheet, PDF (1/1 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMST4403
MMST4403 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T _PCM:
0.2 W (Tamb=25℃)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
.,L ^{Collector current}
I_CM:
-0.6 A
Collector-base voltage
V_(BR)CBO:
-40 V
O _{Operating and storage junction temperature range}
2. 30¡ À0. 05
Unit: mm
C T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX UNIT
IC _{Collector-base breakdown voltage}
V(BR)CBO
Ic=-100µA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-40
V
N _{Emitter-base breakdown voltage}
V(BR)EBO
IE=-100µA, IC=0
-5
V
O _{Collector cut-off current}
ICBO
VCB=-35V, IE=0
-0.1
µA
R _{Collector cut-off current}
ICEO
VCE=-35V, IB=0
-0.1
µA
T _{Emitter cut-off current}
IEBO
VEB=-4V, IC=0
-0.1
µA
DC current gain
hFE
VCE=-2V, IC= -150mA
100
300
C _{Collector-emitter saturation voltage}
VCE(sat)
IC=-150 mA, IB=-15mA
-0.4
V
E _{Base-emitter saturation voltage}
L _{Transition frequency}
E _{Output Capacitance}
J _{Delay time}
E_{Rise time}
W^{Storage time}
VBE(sat)
fT
C_ob
t_d
t_r
t_S
IC=- 150 mA, IB=-15mA
VCE= -10V, IC= -20mA
f = 100MHz
VCB=-10V, IE= 0
f=1MHz
VCC=-30V, IC=-150mA
VBE(off)=-2V, IB1=-15mA
VCC=-30V, IC=-150mA
-0.95
V
200
MHz
8.5
pF
15
nS
20
nS
225
nS
Fall time
t_f
IB1= IB2= -15mA
30
nS
Marking
:K3T
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]