MMST4001 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (NPN)

RoHS
MMST4401
MMST4401 TRANSISTOR (NPN)
SOT-323
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.6 A
Collector-base voltage
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J,T_stg: -55℃ to +150℃
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
C_ob
t_d
t_r
Test conditions
Ic=100µA , IE=0
IC= 1mA , IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VCE=35V, IB=0
VEB=5V, IC=0
VCE=1V, IC= 150mA
VCE=2V, IC= 500mA
IC=150 mA, IB=15mA
IC= 150 mA, IB=15mA
VCE= 10V, IC= 20mA
f = 100MHz
VCB=10V, IE= 0
f=1MHz
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
MIN MAX UNIT
60
V
40
V
6
V
0.1
µA
0.1
µA
0.1
µA
100
300
40
0.4
V
0.95
V
250
MHz
6.5
pF
15
nS
20
nS
Storage time
t_S
VCC=30V, IC=150mA
225
nS
Fall time
t_f
IB1= IB2= 15mA
30
nS
Marking: K3X
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:[e-mail]