MMST3906 Datasheet, PDF (1/1 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMST3906
MMST3906 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T _PCM:
0.2
W (Tamb=25℃)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
Collector current
2. 30¡ À0. 05
.,L ^ICM:
-0.2
A
Collector-base voltage
V_{(BR) CBO}:
-40
V
O _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃}
unless otherwise specified)
Unit: mm
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
IC ^{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1mA, IB=0
-40
V
N _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -10µA, IC=0
-5
V
O _{Collector cut-off current}
ICBO
VCB= -40V, IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE= -40V, IB=0
-0.1
µA
R _{Emitter cut-off current}
IEBO
VEB= -5V, IC=0
-0.1
µA
CT DC current gain
hFE(1)
hFE(2)
VCE=- 1V, IC= -10mA
VCE= -1V, IC=- 50mA
100
300
60
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=-50 mA, IB= -5mA
-0.3
V
L _{Base-emitter saturation voltage}
E _{Transition frequency}
J _{Output Capacitance}
E_{Delay time}
W^{Rise time}
VBE(sat)
fT
C_ob
t_d
t_r
IC= -50 mA, IB= -5mA
VCE= -20V, IC= -10mA
f=100MHz
VCB=-5V, IE= 0
f=1MHz
VCC=-3V, IC=-10mA
VBE(off)=-0.5V, IB1=-1mA
-0.95
V
300
MHz
4.5
pF
35
nS
35
nS
Storage time
t_S
VCC=-3V, IC=-10mA
225
nS
Fall time
t_f
IB1= IB2= -1mA
75
nS
Marking
K5N
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:[e-mail]