MMST3904_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
MMST3904 TRANSISTOR (NPN)
MMST3904
WEJ ^{ELECTRONIC CO.,LTD FEATURES}
Power dissipation
P_CM:
0.2
Collector current BASE
W (Tamb=25℃)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
I_CM:
0.2 A
Collector-base voltage
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 10µA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1 mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE= 10µA, IC=0
5
Collector cut-off current
ICBO
VCB= 60V, IE=0
Collector cut-off current
ICEO
VCE= 40V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE= 1V, IC= 10mA
100
VCE= 1V, IC= 50mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=50 mA, IB= 5mA
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
VBE(sat)
IC= 50 mA, IB= 5mA
VCE= 20V, IC= 10mA
fT
250
f=100MHz
VCB=5V, IE= 0
C_ob
f=1MHz
t_d
VCC=3V, VBE=0.5V
t_r
IC=10mA , IB1=1mA
t_S
VCC=3V, IC=10mA
Unit: mm
MAX
0.1
0.1
0.1
300
UNIT
V
V
V
µA
µA
µA
0.3
V
0.95
V
MHz
4
pF
35
nS
35
nS
200
nS
Fall time
t_f
IB1= IB2= 1mA
50
nS
Marking
K2N
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]