MMST2907A Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMST2907A
MMST2907A TRANSISTOR (PNP)
SOT-323
1. BASE
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
P_CM:
0.2
W (Tamb=25℃)
Collector current
I_CM:
-0.6
A
Collector-base voltage
V_{(BR) CBO}:
-60
V
Operating and storage junction temperature range
2. 30¡ À0. 05
Unit: mm
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -10mA, IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -50V, IE=0
-0.01
µA
Collector cut-off current
ICEO
VCE= -35V, IB=0
-0.05
µA
Emitter cut-off current
IEBO
VEB= -3V, IC=0
-0.01
µA
DC current gain
hFE(1)
hFE(2)
VCE=-10V, IC= -150mA
VCE= -10V, IC=-1mA
100
300
100
Collector-emitter saturation voltage
VCE(sat)
IC=-500 mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
VBE(sat)
IC= -500 mA, IB= -50mA
-1.2
V
VCE= -20V, IC= -50mA
fT
200
f=100MHz
MHz
C_ob
VCB=-10V, IE= 0
f=1MHz
8
pF
t_d
VCC=-30V, IC=-150mA
t_r
VBE(off)=-0.5V, IB1=-15mA
10
nS
25
nS
t_S
VCC=-30V, IC=-150mA
80
nS
Fall time
t_f
IB1= IB2= -15mA
30
nS
Marking: K3F
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