MMST2222A Datasheet, PDF (1/1 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMST2222A
MMST2222A TRANSISTOR (NPN)
SOT-323
WEJ ^{ELECTRONIC CO.,LTD FEATURES}
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.6
A
Collector-base voltage
V_(BR)CBO:
75
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
C_ob
t_d
t_r
Test conditions
Ic= 10µA, IE=0
Ic= 10mA, IB=0
IE=10µA, IC=0
VCB=70V, IE=0
VCE=35V, IB=0
VEB= 3V, IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 1mA
IC=500 mA, IB= 50mA
IC=500 mA, IB= 50mA
VCE=20V, IC= 20mA
f=100MHz
VCB=10V, IE= 0
f=1MHz
VCC=30V, IC=150mA
VBE(off)=0.5V, IB1=15mA
MIN
75
40
6
100
50
300
MAX
0. 1
0. 1
0. 1
300
UNIT
V
V
V
µA
µA
µA
0.6
V
1.2
V
MHz
8
pF
10
nS
25
nS
Storage time
t_S
VCC=30V, IC=150mA
225
nS
Fall time
t_f
IB1= IB2= 15mA
60
nS
Marking
K3P
WEJ ELECTRONIC CO.
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