MMDT5551 Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMDT5551
MMDT5551 ^SOT-363 Multi-Chip TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.2 A
Collector-base voltage
O _V(BR)CBO:
180 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC ^Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
180
V
N _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic=1mA, IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
O _{Collector cut-off current}
ICBO
VCB=120V, IE=0
R _{Emitter cut-off current}
IEBO
VEB=4V, IC=0
V
50 nA
50 nA
CT _{DC current gain}
hFE(1)
VCE=5V, IC=1mA
80
hFE(2)
VCE=5V, IC=10mA
80
hFE(3)
VCE=5V, IC=50mA
30
250
LE _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
J _{Transition frequency}
WE^{Collector output capacitance}
VCE(sat)(1)
IC=10mA, IB=1mA
VCE(sat)(2)
IC=50mA, IB=5mA
VBE(sat)(1)
IC=10mA, IB=1mA
VBE(sat)(2)
IC=50mA, IB=5mA
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1MHz
0.15 V
0.2 V
1
V
1
V
300 MHz
6
pF
Noise figure
NF
VCE=5V, Ic=200µA,
8
dB
f=1KHz, Rg=1KΩ
CLASSIFICATION OF h_FE(1)
Marking
K4N
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