MMDT5451_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistor

RoHS
MMDT5451
MMDT5451 Multi-Chip General Purpose TRANSISTOR
SOT-363 _{(PNP and NPN)}
FEATURES
D _{Power dissipation}
T _PCM:
200 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
±200 mA
Collector-base voltage
V_(BR)CBO:
180/-160 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
NIC _TR2
O _TR1
MAKING: KNM
CTR ^{TR2(NPN 5551) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
E _{Collector-base breakdown voltage}
V(BR)CBO
Ic=100µA, IE=0
180
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
160
V
L _{Emitter-base breakdown voltage}
V(BR)EBO
IE=10µA, IC=0
6
V
E _{Collector cut-off current}
ICBO
VCB=120V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB=4V, IC=0
50
nA
VCE=5V, IC=1mA
80
J _{DC current gain}
hFE
VCE=5V, IC=10mA
80
E _{VCE=5V, IC=50mA}
30
W^{Collector-emitter saturation voltage}
VCE(sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
250
0.15
V
0.2
Emitter-base saturation voltage
VBE(sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
V
Transition frequency
fT
VCE=10V, IC=10mA, f=100MHz
100
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
6
pF
Noise Figure
NF
VCE=5V, IC=0.2mA, f=1KHz
8
dB
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