MMDT3906_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
MMDT3906
MMDT3906 _{SOT-363 FEATURES}
Power dissipation
Multi-Chip TRANSISTOR (PNP)
D _PCM:
0.2 W (Tamb=25℃)
T _{Collector current}
I_CM:
-0.2 A
.,L ^{Collector-base voltage}
V_(BR)CBO:
-40 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
C _{MAKING: K3N}
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC ^Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
-40
N _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic=-1mA, IB=0
-40
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
O _{Collector cut-off current}
ICBO
VCB=-30V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
R _hFE(1)
VCE=-1V, IC=-0.1mA
60
Th_FE(2)
VCE=-1V, IC=-1mA
80
DC current gain
hFE(3)
VCE=-1V, IC=-10mA
100
C_hFE(4)
VCE=-1V, IC=-50mA
60
hFE(5)
VCE=-1V, IC=-100mA
30
LE ^{Collector-emitter saturation voltage}
VCE(sat)1
VCE(sat)2
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
E _{Base-emitter saturation voltage}
VBE(sat)1
VBE(sat)2
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.65
Transition frequency
fT
VCE=-20V, IC=-10mA, f=100MHz 250
J _{Collector output capacitance}
E_{Noise figure}
Cob
VCB=-5V, IE=0, f=1MHz
NF
VCE=-5V, Ic=-0.1mA,
f=1KHZ, Rg=1KΩ
W^{Delay time}
t_d
VCC=-3V, VBE=0.5V
TYP
MAX
-0.05
-0.05
UNIT
V
V
V
µA
µA
300
-0.25 V
-0.4 V
-0.85 V
-0.95 V
MHz
4.5
pF
4
dB
35
nS
Rise time
t_r
IC=-10mA , IB1=-IB2=- 1mA
35
nS
Storage time
t_S
VCC=-3V, IC=-10mA
225 nS
Fall time
t_f
IB1=-IB2=- 1mA
75
nS
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