MMDT2907A_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

RoHS
MMDT2907A
MMDT2907A _FEATURES
Power dissipation
TRANSISTOR (PNP)
D _PCM:
0.15 W (Tamb=25℃)
T _{Collector current}
I_CM:
-0.6
A
.,L ^{Collector-base voltage}
V_(BR)CBO:
-60
V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
IC Collector-base breakdown voltage
Collector-emitter breakdown voltage
N _{Emitter-base breakdown voltage}
Collector cut-off current
O Emitter cut-off current
R _{DC current gain}
CT _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
L _{Transition frequency}
E _{Output Capacitance}
J _{Input Capacitance}
WE^{Delay time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
C_ob
C_ib
t_d
Test conditions
Ic= -10µA, IE=0
Ic= -10mA, IB=0
IE=-10µA, IC=0
VCB=-50V, IE=0
VEB= -3V, IC=0
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150 mA, IB=-15mA
IC=-500 mA, IB=- 50mA
IC=-150 mA, IB=-15mA
IC=-500 mA, IB= -50mA
VCE=-20V, IC= -50mA
f=100MHz
VCB=-10V, IE= 0
f=1MHz
VEB=-2V, IC= 0
f=1MHz
VCC=-30V, IC=-150mA,
MIN
-60
-60
-5
75
100
100
100
50
200
MAX
-0. 01
-0. 01
300
-0.4
-1.6
-1.3
-2.6
8
30
10
UNIT
V
V
V
µA
µA
V
V
V
V
MHz
pF
pF
nS
Rise time
t_r
IB1=-15mA
40
nS
Storage time
t_S
VCC=-6V, IC=-150mA
225
nS
Fall time
t_f
IB1= IB2= -15mA
60
nS
Marking
K2F
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:[e-mail]