MMDT2227 Datasheet, PDF (1/2 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMDT2227
MMDT2227 _FEATURES
Power dissipation
Multi-Chip TRANSISTOR (NPN/PNP)
D _PCM:
200
mW (Tamb=25℃)
T _{Collector current}
I_CM:
200/-200 mA
.,L ^{Collector-base voltage}
V_(BR)CBO:
75/-60 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
C _{NPN2222A ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
IC _{Collector-base breakdown voltage}
N _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
O _{Collector cut-off current}
R _{Emitter cut-off current}
T _{DC current gain}
C _{Collector-emitter saturation voltage}
LE _{Base -emitter saturation voltage}
E _{Transition frequency}
J _{Collector output capacitance}
WE^{Noise Figure}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
Test conditions
Ic=10µA, IE=0
Ic=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=3V, IC=0
VCE=10V, IC=150mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VCE=10V, Ic=0.1mA,
f=1KHZ, Rs=1KΩ
MIN TYP MAX UNIT
75
V
40
V
6
V
10 nA
10 nA
100
300
0.3 V
1
V
1.2 V
2
V
300
MHz
8
pF
4
dB
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