MMDT2222A Datasheet, PDF (1/1 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMDT2222A
MMDT2222A TRANSISTOR (NPN)
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM:
0.15 W (Tamb=25℃)
Collector current
I_CM:
0.6 A
Collector-base voltage
V_(BR)CBO:
75
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise
Test conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= 10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB= 3V, IC=0
hFE(1)
VCE=10V, IC= 0.1mA
hFE(2)
VCE=10V, IC= 1mA
DC current gain
hFE(3)
hFE(4)
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
hFE(5)
VCE=10V, IC= 500mA
hFE(6)
VCE=1V, IC= 150mA
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
Transition frequency
VCE=20V, IC= 20mA
fT
f=100MHz
specified)
MIN
75
40
6
35
50
75
100
40
35
0.6
300
Output Capacitance
VCB=10V, IE= 0
C_ob
f=1MHz
Input Capacitance
VEB=0.5V, IC= 0
C_ib
f=1MHz
Noise Figure
Delay time
Rise time
VCE=10V, IC=100µA
NF
f=1KHz,Rs=1KΩ
t_d
VCC=30V, IC=150mA
t_r
VBE(off)=0.5V, IB1=15mA
MAX
0. 01
0. 01
300
0.3
1
1.2
2
8
25
4
10
25
UNIT
V
V
V
µA
µA
V
V
V
V
MHz
pF
pF
dB
nS
nS
Storage time
Fall time
t_S
VCC=30V, IC=150mA
t_f
IB1= IB2= 15mA
225
nS
60
nS
Marking
:K1P
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]