MMDB4148 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SWITCHING DIODE

RoHS
MMBD4148/BAS16TW
WEJ ^{ELECTRONIC CO.,LTD MMBD4148TW /BAS16TW SWITCHINGDIODE}
FEATURES
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_O:
150 mA
Collector-base voltage
V_R:
75 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
6
4
MAKING: KA2
A
1
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Total capacitance
Symbol
V(BR) R
IR
VF
CT
Test conditions
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
MIN
MAX
75
1
0.025
0.715
0.855
1
1.25
2
UNIT
V
µA
V
pF
Reveres recovery time
trr
4
nS
Irr=0.1×IR, RL=100Ω
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