MMBTA94 Datasheet, PDF (1/1 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

RoHS
MMBTA94
MMBTA94 _FEATURES
TRANSISTOR (PNP)
D _{Power dissipation}
T _PCM:
0.35
W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-0.2
A
Collector-base voltage
O V_(BR)CBO:
-400
V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
Collector cut-off current
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
J _{Transition frequency}
Symbol
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE (sat)
VCE (sat)
VBE (sat)
fT
Test conditions
Ic= -100µA, IE=0
IC= -1mA, IB=0
IE=-100µA,IC=0
VCB=-400V, IE=0
VCE=-400V, IB=0
VEB= -4V, IC=0
VCE=-10V, IC=-10 mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100 mA
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
IC=-10 mA, IB= -1 mA
VCE=-20V, IC=-10mA
f =30MHz
MIN
-400
-400
-5
80
70
60
50
TYP
MAX
-0.1
-5
-0.1
300
-0.2
-0.3
-0.75
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
WE^MARKING
4D
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]