MMBTA92LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Voltage Transistors

RoHS
M M B TA 9 2 LT 1
PNP EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD HIGHVOLTGETRANDIDTOR
Complement to MMBTA42LT1
High Collector-Emitter Voltage:Vcbo=-300V
Collector current:Ic=-500mA
Collector Dissipation:Pc=225mW(Ta=25^oC)
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
-300
-300
-5
-500
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Characteristic
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Current Gain-Bandwidth Product
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
Cob
fT
-300
V _{IC=-100 A IE=0}
-300
V _{IC=-1mA IB=0}
-5
V IE=-100 A IC=0
-250 nA VCB=-200V, Ve=0
-100 nA VCB=-3V, IC=0
40
250
VCE=-10V, IC=-10mA
-0.5 V IC=-20mA, IB=-2mA
-0.9 V IC=-20mA, IB=-2mA
6
PF ^{VCB=-20V, IE=0 f=100MHz}
50 100
MHz ^{VCE=-20V IC=-10mA}
f=100MHz
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width}<_{300uS Duty cycle} <_2%
DEVICE MARKING:
MMBTA92LT1=2D
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]