MMBTA44_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
MMBTA44
MMBTA44 _{D FEATURES}
TRANSISTOR (NPN)
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
T _{Power dissipation}
.,L ^PCM:
0.35 W (Tamb=25℃)
2. 80¡ À0. 05
1. 60¡ À0. 05
Collector current
O _ICM:
Collector-base voltage
0.2 A
C _V(BR)CBO:
400 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
Symbol
Test conditions
MIN
TYP
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA, IE=0
400
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
400
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE=100µA, IC=0
5
T _{Collector cut-off current}
ICBO
VCB=400V, IE=0
Collector cut-off current
ICEO
VCE=400V
C _{Emitter cut-off current}
IEBO
VEB= 4V, IC=0
E _HFE(1)
VCE=10V, IC=10 mA
80
L _{DC current gain}
HFE(2)
VCE=10V, IC=1mA
70
HFE(3)
VCE=10V, IC=100 mA
60
E _{Collector-emitter saturation voltage}
VCE(sat)
VCE(sat)
IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
J _{Base-emitter sataration voltage}
WE^{Transition frequency}
VBE(sat)
IC=10 mA, IB= 1 mA
VCE=20V, IC=10mA
fT
50
f =30MHz
MAX
0.1
5
0.1
300
0.2
0.3
0.75
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
MARKING
3D
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]