MMBT9015LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – PNP EPITAXIAL SILICON TRANSISTOR

RoHS
MMBT9015LT1
PNP EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD LOW FREQRENCY,LOW NOISE AMPLIFIER
Complemen to MMPT9014LT1
Collector-current:Ic=-100mA
Collector-Emiller Voltage:VCE=-45V
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
-50
-45
-5
-100
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
fT
NF
-50
V _{IC=-100 A IE=0}
-45
V _{IC=-1mA IB=0}
-5
V IE=-100 A IC=0
-50 nA VCB=-50V, VC=0
-50 nA VCB=-5V, IC=0
60 200 600
VCE=-5V, IC=1mA
-0.20 -0.7 V IC=-100mA, IB=-5mA
-0.82 -1.0 V
-0.6 -0.67 ^{-0.75 V}
IC=-100mA, IB=-5mA
VCe=-5V, IC=-2mA
4.5 7 PF VCB=-10V, IE=0 f=1MHz
100 ₁₉₀
MHz _{VCE=-5V IC=-10mA}
0.7 10 ^dB VCE=-5V IC=-0.2mA
f=1MHz Rs=1Kohm
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width 300uS Duty cycle 2%}
DEVICE MARKING:
MMBT9015LT1=M6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]