MMBT9013LT1 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
MMBT9013LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD 1WOUTPUTAMPLIFIEROFPORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
Complement to 9012
Collector Current :Ic=500mA
High Total Power Dissipation Pc=225mW
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
40
20
5
500
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE1
HFE2
VCE(sat)
VBE(sat)
VBE(on)
40
20
5
100
100
64 ₁₂₀ 300
30
0.18 0.6
0.95 1.2
0.6 _0.67 0.7
V _{IC=100 A IE=0}
V _{IC=1mA IB=0}
V IE=100 A IC=0
nA VCB=25V, VC=0
nA VCB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
V IC=500mA, IB=50mA
V IC=500mA, IB=50mA
V _{VCe=1V, IC=10mA}
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width}<_ _{300uS Duty cycle} <_ _2%
DEVICE MARKING:
9013=K6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]