MMBT9012LT1 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – PNP EPITAXIAL SILICON TRANSISTOR

RoHS
MMBT9012LT1
PNP EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD 1WOUTPUTAMPLIFIEROFPORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
Complement to 9013G
Collector Current :Ic=-500mA
High Total Power Dissipation Pc=225mW
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
-40
-20
-5
-500
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE1
HFE2
VCE(sat)
VBE(sat)
VBE(on)
-40
-20
-5
-100
-100
64 ₁₂₀ 300
30
-0.18 -0.6
-0.95 -1.2
-0.6 _-0.67 -0.7
V _{IC=-100 A IE=0}
V _{IC=-1mA IB=0}
V IE=-100 A IC=0
nA VCB=-25V, VC=0
nA VCB=-3V, IC=0
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
V IC=-500mA, IB=-50mA
V IC=-500mA, IB=-50mA
V _{VCe=-1V, IC=-10mA}
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width}<_ _{300uS Duty cycle} <_ _2%
DEVICE MARKING:
9012=J6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]