MMBT8550LT1 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – PNP EPITAXIAL SILICON TRANSISTOR

RoHS
MMBT8550LT1
PNP EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD 2WOUTPUT AMPLIFIEROFPORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
Complement to MMPT8050LT1
Collector-current:Ic=-500mA
High Total Power Dissipation:Pc=225mW
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEB
Ic
PD
Tj
Tstg
Rating
-40
-25
-6
-500
225
150
-55-150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O
C
Electrical Characteristics
(Ta=25 ^oC)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol MIN. TYP. MAX. Unit
Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE(sat)
Cob
fT
-40
V _{IC=-100uA IE=0}
-25
V _{IC=-1mA IB=0}
-6
V IE=-100uA IC=0
-100 nA VCB=-35V, IE=0
-100 nA VEB=-6V, IC=0
45 170
VCE=-1V, IC=-5mA
85 160 300
VCE=-1V, IC=-50mA
30 80
VCE=-1V, IC=-500mA
-0.28 ^{-0.6 V} IC=-500mA, IB=-50mA
-0.98 ^-1.2 V IC=-500mA, IB=-50mA
-0.66 ¹
V ICE=-1mA, IC=-10mA
15
PF _{VCB=-10V, IE=0,f=1MHz}
100 200
MHz _{VCE=-10V, IC=-50mA}
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width 300uS Duty cycle 2%}
DEVICE MARKING:
MMBT8550LT1=B6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]