MMBT8050LT1 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD 2WOUTPUT AMPLIFIEROFPORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
Complement to MMPT8550LT1
Collector Current:Ic=500mA
Collector Dissipation:Pc=225mW(Tc=25^oC)
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
40
25
6
500
225
150
-55-150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O_C
O
C
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance
(Ta=25 ^oC)
Symbol MIN. TYP. MAX. Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
Cob
40
25
6
100
100
45
85 ¹⁶⁰ 300
30
0.28 0.5
0.98 1.2
0.66 1
9
V _{IC=100uA IE=0}
V _{IC=1mA IB=0}
V IE=100uA IC=0
nA VCB=35V, IE=0
nA VEB=6V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
V _{IC=500mA, IB=50mA}
V IC=500mA, IB=50mA
V ICE=1V, IC=10mA
PF _{VCB=10V, IE=0,f=1MHz}
Current Gain-Bandwidth Product
fT
100 ¹⁹⁰
MHz _{VCE=10V, IC=50mA}
*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25^oC
# _{Pulse Test: Pulse Width 300uS ,Duty cycle 2%}
MMBT8050LT1=A6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]