MMBT5551LT1 Datasheet, PDF (1/2 Pages) Avic Technology – SOT-23 Plastic-Encapsulate Transistors

RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD HIGHVOLTAGETRANSISTOR
Collector Dissipation:Pc-225mW(Ta=25^o)
Collector-Emiller Voltage:VCEO=160V
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25^oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
180
160
6
600
225
150
-55~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O
C
O_C
Electrical Characteristics
(Ta=25 ^oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
BVCBO
180
Collector-Emitter Breakdown Voltage# ^{BVCEO 160}
Emitter-Base Breakdown Voltage
BVEBO
6
Collector-Base Cutoff Current
ICBO
Emitter-Base Cutoff Current
IEBO
DC Current Gain
hFE1
80
DC Current Gain
hFE2
80
DC Current Gain
hFE3
30
Collector-Emitter Saturation Voltage
VCE(sat)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
50
50
250
0.5
0.15
1
1
V _{IC=100 A IE=0}
V _{IC=1mA IB=0}
V IE=10 A IC=0
nA VCB=120V, VC=0
nA VCB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=-10mA
VCE=5V, IC=50mA
V IC=50mA, IB=5mA
V IC=10mA, IB=1mA
V _{IC=50mA, IB=1mA}
V IC=10mA, IB=1mA
Current Gain-Bandwidth Product
fT
100
300 MHz VCE=10V, IC=10mA,f=100MHz
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
# _{Pulse Test: Pulse Width 300uS Duty cycle 2%}
DEVICE MARKING:
2N5551S=Z1
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]