MMBT5401LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SOT-23 Plastic-Encapsulate Transistors

RoHS
MMBT5401LT1 TRANSISTOR (PNP)
SOT-23 Plastic-Encapsulate Transistors
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_CM : 0.3 W (Tamb=25^OC)
Collector current
I_CM : -0.6A
Collector-base Voltage
V_(BR)CBO :-160V
Operating and storage junction temperature range
T_j, T_stg : -55^OC to +150^OC
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Electrical Characteristics
(Tamp=25 ^oC unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
fT
Test Condition
IC=-100 A, IE=0
IC=-1 mA, IB=0
IE=-10 A, IB=0
VCB=-120V, IE=0
VEB=-4V, IC=0mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
Min. Typ. Max. Unit
-160
V
-150
V
-5
V
-0.1 _A
-0.1 _A
80
100
200
50
-0.5 V
-1 V
V^CE=-20V, I^C=-50mA ,f=100MHz ₁₀₀
MHz
Device Marking
MMBT5401LT1 = 2L
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]