MMBT4403LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Switching Transistor

RoHS
MMBT4403LT1
TRANSISTOR (NPN)
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_CM : 0.225 W (Tamb=25 C)
Pluse Drain
I_CM : -0.6 mA
Reverse Voltage
V_(BR)CBO : -40V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-emitter saturatio voltage
Transition Frequency
Unit:mm
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
(Ta=25 C)
Test Condition
Min. Typ. Max. Unit
IC=-100 A, IE=0
IC=-1 mA, IB=0
IE=-100 A, IC=0
VCB=-35V, IE=0
VCB=-35V, IB=0
-40
V
-40
V
-5
V
-0.1 _A
-0.1 A
VEB=-4V, IC=0
VCE=-2V, IC=-150mA
100
-0.1 _A
300
VCE=-2V, IC=-500mA
20
IC=-150mA, IB=-15mA
-0.4 V
IC=-150mA, IB=-15mA
-0.95 V
VCE=-10V, IC=-20mA ,f=100MHz ₂₀₀
Mhz
Device Marking
MMBT4401LT1 = 2X
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