MMBT4401LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN TRANSISTOR

RoHS
MMBT4401LT1
TRANSISTOR (NPN)
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_CM : 0.225 W (Tamb=25 C)
Pluse Drain
I_CM : 0.6 mA
Reverse Voltage
V_(BR)CBO : 60V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-emitter saturatio voltage
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Test Condition
IC=100 A, IE=0
IC=1 mA, IB=0
IE=100 A, IC=0
VCB=50V, IE=0
VCB=35V, IB=0
VEB=5V, IC=0
VCE=1V, IC=150mA
VCE=2, IC=500mA
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=20mA ,f=100MHz
(Ta=25 C)
Min. Typ. Max. Unit
60
V
40
V
6
V
0.1 _A
0.1 A
0.1 _A
100
300
40
0.4 V
0.95 V
250
Mhz
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]