MMBT3906LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

RoHS
MMBT3906LT1
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
SOT-23
WEJ ELECTRONIC CO.,LTD GENERALPURPOSETRANSISTOR
Complementary Pair with MMBT3904LT1.
Collector Dissipation:Pc=225mW
Collector-Emitter Voltage:VCEO=-40V
PNP Epitaxial Silicon Transistor
0.5Ref.
2.3 0.2
1.3 0.2
2
3
1
0.38Ref.
0.5Ref.
2A
Marking
MINO.1
Tolerance:0.1mm
0.01-0.10
1.EMITTER
2.BASE
3.COLLECTOR
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
-40
-40
-5
-200
225
150
-50~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O_C
O
C
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(Ta=25 ^oC)
Symbol MIN. TYP. MAX. Unit
Condition
BVCEO
BVCBO
BVEBO
ICEO
IEBO
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)
VCE(sat)
VBE(sat)
-40
-40
-5
60
80
100
60
30
-50
-50
300
-0.4
-0.25
-0.95
V _{IC=-1mA IB=0}
V _{IC=-10 A IE=0}
V IE=-10 A IC=0
nA VCB=-30V, VEB=-3V
nA VCB=-3V, IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
V IC=-50mA, IB=-5mA
V IC=-10mA, IB=-1mA
V _{IC=-50mA, IB=-5mA}
Base-Emitter Saturation Voltage
VBE(sat)
-0.85 V IC=-10mA, IB=-1mA
Output Capacitance
Cob
4.5 PF VCE=-5V, IC=0,f=1MHz
Current Gain-Bandwidth Product
fT
250
MHz VCE=-20V, IC=-10mA,f=100MHz
Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
Pulse Test: Pulse Width 300uS Duty cycle 2%
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