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| MMBT3904T Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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RoHS
MMBT3904T
MMBT3904T FEATURES
Power dissipation
TRANSISTOR (NPN)
D PCM: 0.15 W (Tamb=25â)
T Collector current
ICM: 0.2 A
.,L Collector-base voltage
V(BR)CBO: 60
V
Operating and storage junction temperature range
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
O TJ,Tstg: -55â to +150â
MARKING:1N
C ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
N Emitter-base breakdown voltage
Collector cut-off current
O Emitter cut-off current
TR DC current gain
EC Collector-emitter saturation voltage
L Base-emitter saturation voltage
E Transition frequency
J Collector output capacitance
Noise figure
WEDelay time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
td
Test conditions
Ic=10µA,IE=0
Ic=1mA,IB=0
IE=10µA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,
f=1MHZ,Rg=1Kâ¦
VCC=3V, VBE=0.5V
MIN TYP MAX UNIT
60
V
40
V
6
V
0.05 µA
0.05 µA
40
70
100
300
60
30
0.2 V
0.3 V
0.65
0.85 V
0.95 V
300
MHz
4
pF
5
dB
35
nS
Rise time
tr
IC=10mA , IB1=1mA
35
nS
Storage time
tS
VCC=3V, IC=10mA
200 nS
Fall time
tf
IB1= IB2= 1mA
50
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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