MMBT3904LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SOT-23 TRANSISTOR

RoHS
MMBT3904LT1
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
SOT-23
WEJ ELECTRONIC CO.,LTD GENERALPURPOSETRANSISTOR
Complementary Pair with MMBT3906LT1.
Collector Dissipation:Pc=225mW
Collector-Emitter Voltage:VCEO=40V
NPN Epitaxial Silicon Transistor
0.5Ref.
2.3 0.2
1.3 0.2
2
3
1
0.38Ref.
0.5Ref.
1A
Marking
MINO.1
Tolerance:0.1mm
0.01-0.10
1.EMITTER
2.BASE
3.COLLECTOR
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
60
40
6
200
225
150
-50~150
(Ta=25 ^oC)
Unit
V
V
V
mA
mW
O_C
O
C
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(Ta=25 ^oC)
Symbol MIN. TYP. MAX. Unit
Condition
BVCEO
BVCBO
BVEBO
ICEO
IEBO
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)
VCE(sat)
VBE(sat)
40
60
6
40
70
100
60
30
0.65
50
50
300
0.2
0.3
0.85
V _{IC=1mA IB=0}
V _{IC=10 A IE=0}
V IE=10 A IC=0
nA VCB=30V, VEB=3V
nA VCB=3V, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
V IC=10mA, IB=1mA
V IC=50mA, IB=5mA
V _{IC=10mA, IB=1mA}
Base-Emitter Saturation Voltage
VBE(sat)
0.95 V IC=50mA, IB=5mA
Output Capacitance
Cob
4
PF VCE=5V, IC=0,f=1MHz
Current Gain-Bandwidth Product
fT
300
MHz VCE=20V, IC=10mA,f=100MHz
Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC
Pulse Test: Pulse Width 300uS Duty cycle 2%
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]