MMBT2907AT Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMBT2907AT
MMBT2907AT TRANSISTOR (PNP)
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM:
0.15 W (Tamb=25℃)
Collector current
I_CM:
-0.6 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)(1)
VBE(sat)(2)
fT
Cob
Ic=-10µA, IE=0
Ic=-10mA, IB=0
IE=-10µA, IC=0
VCB=-50V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-100µA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
-60
-60
-5
75
100
100
100
50
Turn-on Time
ton
Delay Time
td
Vcc=-30V, Ic=-150mA, IB1=-15mA
Rise Time
tr
Turn-off Time
toff
TYP
140
MAX
-10
-10
UNIT
V
V
V
nA
nA
300
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
5
pF
45
ns
10
ns
40
ns
100 ns
Storage Time
ts
80
ns
Vcc=-6V,Ic=-150mA,IB1= IB2=-15mA
Fall Time
tf
30
ns
Marking
2F
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]