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| MMBT2907A Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR | |||
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RoHS
MMBT2907A
MMBT2907A TRANSISTOR (PNP)
FEATURES
y Epitaxial planar die construction
y Complementary NPN Type available(MMBT2222A)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MARKING:2F
MAXIMUM RATINGS(TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-0.6
0.225
150
-55 to +150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICE0
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VCE=-30V,VEB(0ff)=-0.5V
VEB=-3V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCC=-30V,IC=-150mA IB1=- 15mA
VCC=-6V,IC=-150mA,IB1=-IB2=-15mA
MIN TYP MAX UNIT
-60
V
-60
V
-5
V
-20 n A
-50
nA
-10
nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
10
nS
25
nS
225 nS
60
nS
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
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