MMBT2222LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SOT-23 TRANSISTOR

RoHS
MMBT2222LT1
SOT-23 TRANSISTOR
WEJ ELECTRONIC CO.,LTD Description
Medium Power Amplifier.
NPN Silicon Transistor.
Features
Large collector current:ICmax=600mA
Low collector saturation voltage
enabling low voltage operation
Complementary pair with .
Dimensions(Unit:mm)
SOT-23
0.5Ref.
2.3 0.2
1.3 0.2
2
3
1
0.5Ref. hFE RANK
1P
Type Name
0.38Ref.
MINO.1
Tolerance:0.1mm
0.01-0.10
1.EMITTER
2.BASE
3.COLLECTOR
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter ^MMBT2222S
Voltage
MMBT2222AS
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Limit
60
30
40
5
600
150
150
-50~150
( Ta = 2 5 ^oC )
Unit
V
V
V
mA
mW
O_C
O
C
Electrical Characteristics
Parameter
Symbol
Collector-Emitter MMBT2222S
Breakdown Voltage MMBT2222AS
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCEO
BVCBO
BVEBO
ICBO
DC Current Gain
hFE
( Ta = 2 5 ^oC )
MIN. TYP.MAX. Unit
Condition
30
IC=10mA
V
40
60
V IC=10 A
5
V IE=10 A
10 _nA VCB=60V
75
VCE=10V, IC=10mA
Collector-Emitter Saturation Voltage VCE(sat)
0.4 _V IC=150mA, IB=15mA
Current Gain-Bandwidth Product
fT
250
MHz ^{VCE=20V, IC=20mA,f=100MHz}
Collector Output Capacitance
Cob
6.0
pF ^{VCB=10V, IE=0 ,f=1MHz}
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