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| MJD112 Datasheet, PDF (1/2 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |||
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RoHS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGYMCJOD., 1LT1D2
TO-251/TO-252-2 Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
TO-251
TO-252-2
FEATURES
y Complementary darlington power transistors
dpak for surface mount applications
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
1
W
RθJC
Thermal resistance, junction to case
6.25
â/W
RθJA
Thermal resistance, junction to Ambient
71.4
â/W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC =30mA,IB=0
V(BR)EBO IE=5mA,IC=0
ICBO
VCB=100V,IE=0
ICEO
VCE=50V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=3V,IC=500mA
hFE(2) VCE=3V,IC=2A
hFE(3) VCE=3V,IC=4A
VCE(sat)1 IC=2A,IB=8mA
VCE(sat)2 IC=4A,IB=40mA
VBE
VCE=3V,IC=2A
fT
VCE=10V,IC=0.75A,f=1MHz
Cob
VCB=10V,IE=0,f=0.1MHz
100
100
5
500
1000
200
25
TYP
MAX UNIT
V
V
V
20
µA
20
µA
2
mA
12000
2
V
3
V
2.8
V
MHz
100
pF
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
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