MBTA06LT1 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
MBTA06LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD * HighCollector-EmitterVoltage:Vcbo=80V
* Collector Current: Ic=500mA
* Collector Dissipation: Pc=225mW(Ta=25 )
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
80
Collector-Emitter Voltage
Vceo
80
Emitter-Base Voltage
Veb
4
Collector Current
Ic
500
Collector Dissipation Ta=25 *
P_D
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage BVcbo 80
V Ic=100uA Ie=0
Collector-Emitter
Breakdown BVceo 80
V Ic= 1mA Ib=0
Voltage#
Emitter-Base Breakdown Voltage
BVebo 4
V Ie= 100uA Ic=0
Collector Cutoff Current
Icbo
100 nA Vcb= 80V Ie=0
Collector Cutoff Current
Ices
100 nA Vce= 60V Ib= 0
DC Current Gain
Hfe₁
80
DC Current Gain
Hfe₂
80
Collector-Emitter Saturation Voltage Vce(sat)
250
Vce=1V Ic=10mA
Vce=1V Ic=100mA
0.25 V Ic=100mA Ib=10mA
Base-Emitter On Voltage
Vbe(on)
1.2 V Ic=100mA Vce=1V
Current Gain-Bandwidth Product
f_T
100
MHz Vce=2V Ic=10mA
f=100MHz
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
MMBTA06LT1=1G
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]