MBT6517LT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
MBT6517LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
WEJ ^{ELECTRONIC CO.,LTD * CollectorDissipation:Pc=225mW(Ta=25 )}
* Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
350
V
Collector-Emitter Voltage
Vceo
350
V
Emitter-Base Voltage
Collector Current
Base Current
Vebo
Ic
Ib
6
V
500
mA
250
mA
Collector Dissipation Ta=25 *
P_D
225
mW
Junction Temperature
Storage Temperature
Tj
150
Tstg -55-150
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BVcbo 350
V Ic=100uA Ie=0
Collector-Emitter
Voltage#
Breakdown Bvceo 350
V Ic= 1mA Ib=0
Emitter-Base Breakdown Voltage
BVebo 6
V Ie= 10uA Ic=0
Collector Cutoff Current
Icbo
50 nA Vcb= 250V Ie=0
Emitter Cutoff Current
Iebo
50 nA Veb=5V Ic=0
DC Current Gain
Hfe1 20
Vce=10V Ic=1mA
DC Current Gain
Hfe2 30
Vce=10V Ic=10mA
DC Current Gain
Hfe3 30
200
Vce=10V Ic=30mA
DC Current Gain
Hfe4 20
200
Vce=10V Ic=50mA
DC Current Gain
Hfe5 15
Vce=10V Ic=100mA
Collector-Emitter Saturation Voltage Vce(sat)
0.3 V Ic=10mA Ib=1mA
Collector-Emitter Saturation Voltage Vce(sat)
0.5 V Ic=30mA Ib=3mA
Base-Emitter Saturation Voltage
Vbe(sat)
0.75 V Ic=10mA Ib=1mA
Base-Emitter Saturation Voltage
Vbe(sat)
0.9 V Ic=30mA Ib=3mA
Base-Emitter On Voltage
Vbe(on)
2
V Vce=10V Ic=100mA
Current Gain Bandwidth Product
f_T
40
200 MHz Vce=20V Ic=10mA
F=20MHz
Collect Base Capacitance
Ccb
6 PF Vcb=20V Ie=0 f=1MHz
Emitter Base Capacitance
Ceb
80 PF Veb=0.5V f=1.00MHz
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING: MMBT6517LT=1Z
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]