MBR2030CT Datasheet, PDF (1/1 Pages) Diodes Incorporated – 20A SCHOTTKY BARRIER RECTIFIER

RoHS
MBR2030CT-MBR2060CT
MBR2030CT-MBR2060CT _{D SCHOTTKY BARRIER RECTIFIER}
T FEATURES
· Schottky Barrier Chip
.,L ^{· Guard Ring Die Construction for Transient Protection}
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
O · For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220
1. ANODE
2. CATHODE
3. ANODE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC _{Characteristic}
N _{Peak Repetitive Reverse Voltage}
Working Peak Reverse Voltage
O DC Blocking Voltage
PMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
MBR
2030
30
21
MBR MBR MBR MBR MBR
2035 2040 2045 2050 2060 ^Unit
35 40 45 50 60
V
24.5 28 31.5 35 42
V
R _{Average Rectified Output Current}
IO
(Note 1)
@ TC=125℃
T _{Non-Repetitive Peak Forward Surge Current}
8.3ms Single half sine-wave superimposed on
IFSM
C _{rated load}
(JEDEC Method)
Forward Voltage Drop
@ IF=20A, TC=25℃
E_{@ IF=20A, TC=125℃}
L@ IF=10A, TC=25℃
VFM
@ IF=10A, TC=125℃
E Peak Reverse Current
@ TC= 25℃
IRM
at Rated DC Blocking Voltage @ TC=125℃
Typical Junction Capacitance (Note 2)
Cj
20
150
0.84
0.72
0.70
0.57
0.1
15
650
A
A
0.95
0.85
V
0.80
0.70
mA
pF
J _{Operating and Storage Temperature Range}
Tj, TSTG
-65 to +150
℃
WE^{Notes: 1. Thermal resistance junction to case mounted heat sink.}
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
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