MBR20200CT Datasheet, PDF (1/1 Pages) Motorola, Inc – SWITCHMODE™ Power Dual Schottky Rectifier

RoHS
MBR20200CT
MBR20200CT SCHOTTKY BARRIER RECTIFIER
D FEATURES
· Schottky Barrier Chip
T _{· Guard Ring Die Construction for Transient Protection}
.,L ^{· Low Power Loss, High Efficiency}
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
O _{Wheeling, and Polarity Protection Applications}
TO-220
1. ANODE
2. CATHODE
3. ANODE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^{Characteristic}
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
N _{DC Blocking Voltage}
Average Rectified Output Current
O _{(Note 1)}
@ TC=125℃
Non-Repetitive Peak Forward Surge Current
R _{8.3ms Single half sine-wave superimposed on}
rated load
(JEDEC Method)
T _{Repetitive Peak Reverse Surge Current}
@ t≤ 2.0µs
LEC ^{Forward Voltage Drop}
@ IF=10A, TC=25℃
@IF=10A, TC=125℃
@ IF=20A, TC=25℃
@ IF=20A, TC=125℃
Peak Reverse Current
@ TC= 25℃
E at Rated DC Blocking Voltage @ T_C=125℃
Typical Junction Capacitance (Note 2)
VRRM
VRWM
VR
IO
IFSM
IRRM
VFM
IRM
Cj
200
V
20
A
150
A
1
A
0.95
0.8
V
1.0
0.9
1
mA
50
500
pF
J _{Operating and Storage Temperature Range}
Tj, TSTG
-65 to +150
℃
E_{Notes: 1. Thermal resistance junction to case mounted heat sink.}
W ^{2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.}
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