MBR10100 Datasheet, PDF (1/1 Pages) Vishay Siliconix – High Voltage Schottky Rectifiers

RoHS
MBR10100
MBR10100 SCHOTTKY BARRIER RECTIFIER
D _FEATURE
· Schottky Barrier Chip
T _{· Guard Ring Die Construction for Transient Protection}
.,L ^{· Low Power Loss, High Efficiency}
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
O _{Wheeling. and Polarity Protection Applications}
TTOO-2-22200AACC
11. _.ACNAOTDHEODE
3.CATHODE
3. ANODE
123
13
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^{Characteristic}
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
N _{DC Blocking Voltage}
Average Rectified Output Current
O _{(Note 1)}
Non-Repetitive Peak Forward Surge Current
R _{8.3ms Single half sine-wave superimposed on}
rated load
T _{Repetitive Peak Reverse Surge Current}
@ t≤ 2.0µs
C _{Voltage Rate of Change(Rated VR)}
E _{Forward Voltage Drop @ IF=10A, TC=125℃}
@ IF=10A, TC=25℃
L_{@ IF=20A, TC=125℃}
@ IF=20A, TC=25℃
E _{Peak Reverse Current}
@ TC= 25℃
at Rated DC Blocking Voltage @ TC=125℃
J _{Operating and Storage Temperature Range}
Symbol
VRRM
VRWM
VR
IO
IFSM
IRRM
dv/dt
VF
IR
Tj, TSTG
Value
100
10
150
0.5
10000
0.7
0.8
0.85
0.95
0.1
6.0
-55 to +150
WE^{Notes: 1. Thermal resistance junction to case mounted heat sink.}
Unit
V
A
A
A
V/µs
V
mA
℃
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]