LL4150 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

RoHS
LL4150
High-speed switching diode _{TD Features}
.,L ^{1. Small surface mounting type}
2. High reliability
3. High forward current capability
O _Applications
C _{High speed switch and general purpose use in computer and industrial applications}
IC ^Construction
Silicon epitaxial planar
N _{Absolute Maximum Ratings}
RO ^Tj=25
Parameter
Repetitive peak reverse voltage
T _{Reverse voltage}
Peak forward surge current
C _{Forward current}
Average forward current
E _{Power dissipation}
L _{Junction temperature}
Storage temperature range
Test Conditions
t_p=1 s
V_R=0
Type
Symbol
Value
Unit
V_RRM
50
V
V_R
40
V
I_FSM
4
A
I_F
600
mA
I_FAV
300
mA
P_V
500
mW
T_j
175
T_stg
-65~+175
E _{Maximum Thermal Resistance}
J _Tj=25
E_Parameter
W^{Junction ambient}
Test Conditions
Symbol
Value
Unit
on PC board 50mm 50mm 1.6mm
R_thJA
500
K/W
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