KTD1898_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
KTD1898
KTD1898 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
1A
O _V(BR)CBO:
100 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Transition frequency
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=3V, IC=500mA
IC=500mA, IB=20mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
100
V
80
V
5
V
1
µA
1
µA
70
400
0.4 V
100
MHz
20
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
O
70-140
ZO
Y
120-240
ZY
GR
200-400
ZG
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