KTD1351 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

RoHS
KTD1351
KTD1351 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
2 W (Tamb=25℃)
Collector current
I_CM:
O _{Collector-base voltage}
3A
V_(BR)CBO:
60 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T Emitter-base breakdown voltage
Collector cut-off current
C _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic= 100 µA,IE=0
Ic= 50mA, IB=0
IE= 100 µA , IC=0
VCB= 60V, IE=0
VEB= 7V, IC=0
MIN
TYP
60
60
7
E _{DC current gain}
hFE
VCE= 5V, IC= 0.5 A
60
L _{Collector-emitter saturation voltage}
VCE(sat)
VCE=2A, IB=0.2A
E _{Base-emitter voltage}
VBE
VCE= 5V, IC=0.5A
J _{Transition frequency}
fT
VCE=5V, IC=0.5A
2
MAX
100
100
300
1
1
UNIT
V
V
V
µA
µA
V
V
MHZ
E_{CLASSIFICATION OF hFE (1)}
W^Rank
O
Y
GR
Range
60-120
100-200
150-300
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