KTC4377 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH, HIGH CURRENT)

RoHS
KTC4377
KTC4377 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
2A
Collector-base voltage
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
10
V
6
V
0.1 µA
0.1 µA
140
600
70
0.5 V
1.5 V
150
MHz
27
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
A
B
C
D
Range
140-240
200-330
300-450
420-600
Marking
SA
SB
SC
SD
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