KTC4076 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

RoHS
KTC4076
KTC4076 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
100 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
500 mA
Collector-base voltage
O _V(BR)CBO:
35 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
Base-emitter voltage
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=6V, IC=20mA
VCB=6V, IE=0, f=1MHz
MIN TYP MAX UNIT
35
V
30
V
5
V
0.1 µA
0.1 µA
70
240
25
0.25 V
1
V
300
MHz
7
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
70-140
120-240
Marking
WO
WY
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