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KTC3227 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)
RoHS
KTC3227
KTC3227 TRANSISTOR (NPN)
D FEATURES
T Power dissipation
.,L PCM:
1
W (Tamb=25℃)
Collector current
ICM:
400 mA
Collector-base voltage
O V(BR)CBO:
80
V
C Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
N Collector-base breakdown voltage
O Collector-emitter breakdown voltage
R Emitter-base breakdown voltage
T Collector cut-off current
C Emitter cut-off current
E DC current gain
L Collector-emitter saturation voltage
E Base-emitter voltage
J Transition frequency
WECollector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic= 1mA, IE=0
IC= 5 mA , IB=0
IE= 1 mA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE= 2V, IC= 50mA
VCE= 2V, IC= 200mA
IC= 200mA, IB= 20mA
VCE= 2V, IC= 5mA
VCE= 10V, IC= 10mA
VCB=10V, IE=0, f=1MHZ
MIN
80
80
5
70
40
0.55
TYP
80
10
MAX
0.1
0.1
240
UNIT
V
V
V
µA
µA
0.4
V
0.8
V
MHz
pF
CLASSIFICATION OF hFE
Rank
O
Y
Range
70-140
120-240
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