KTC3205 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

RoHS
KTC3205
KTC3205 TRANSISTOR (NPN)
TO-92L
D _FEATURES
1. EMITTER
T _{Power dissipation}
2. COLLECTOR
.,L ^PCM:
Collector current
1
W (Tamb=25℃)
3. BASE
I_CM:
2
A
Collector-base voltage
O _{V (BR) CBO:}
30
V
Operating and storage junction temperature range
123
C _{TJ, Tstg: -55℃ to +150℃}
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC ^Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 1mA , IE=0
30
N _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 10mA, IB=0
30
O _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 1mA, IC=0
5
R Collector cut-off current
ICBO
VCB= 30V, IE=0
0.1
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
T _{DC current gain}
hFE
VCE= 2 V, IC= 500 mA
100
320
C _{Collector-emitter saturation voltage}
VCE (sat)
IC= 1.5A, IB= 30 mA
2.0
E _{Base-emitter voltage}
VBE
VCE=2V, IC= 500mA
1.0
L _{Transition frequency}
fT
VCE= 2 V, IC= 500mA
80
E _{Collector Output Capacitance}
C_ob
VCB=10V, IE=0V,f=1MHZ
13
UNIT
V
V
V
µA
µA
V
V
MHz
pF
J CLASSIFICATION OF hFE
Rank
WE ^Range
O
100-200
Y
160-320
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