KTC3203 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

RoHS
KTC3203
KTC3203 TRANSISTOR (NPN)
D FEATURE
Power dissipation
T _PCM:
0.625 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.8 A
Collector-base voltage
O _V(BR)CBO:
35 V
Operating and storage junction temperature range
C _{Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{TJ: 150℃}
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
Emitter cut-off current
LE _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter voltage}
E_{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Test conditions
Ic= 100µA, IE=0
IC= 10 mA , IB=0
IE= 100µA, IC=0
VCB= 35V, IE=0
VEB= 5V, IC=0
VCE=1V, IC= 100mA
VCE=1V, IC= 700mA
IC= 500 mA, IB= 20mA
VCE= 1V, IC= 10mA
VCE= 5 V, IC= 10mA
MIN
35
30
5
100
35
0.5
TYP MAX UNIT
V
V
V
0.1
µA
0.1
µA
320
0.7
V
0.8
V
120
MHz
W^{CLASSIFICATION OF hFE(1)}
Rank
O
Y
Range
100-200
160-320
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