KTC3202 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

RoHS
KTC3202
KTC3202 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.625 W (Tamb=25℃)
Collector current
I_CM:
0.5
A
O _{Collector-base voltage}
V_(BR)CBO:
35
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-BASE breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE 1
hFE 2
VCE(sat)
Test conditions
Ic= 0.1mA, IB=0
Ic= 1 mA, IB=0
IE= 0.1 mA, IC=0
VCB= 35V, IE=0
VEB= 5V, IC=0
VCE= 1V, IC= 100mA
VCE= 6V, IC= 400mA
IC=100 mA, IB= 10mA
MIN
35
30
5
70
25
TYP
0.1
E _{Base-Emitter Saturation Voltage}
VBE
VCE=1V, IC= 100mA
0.8
J _{Transition frequency}
WE^{Collector Output Capacitance}
fT
VCE= 6V, IC= 20mA
200
C_ob
VCB= 6V, IE= 0,f=1 MHz
7.0
MAX UNIT
V
V
V
0.1
µA
0.1
µA
240
0.25
V
1.0
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
O
Y
Range
70-140
120-240
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]