KTC3200 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AUDIO AMPLIFIER)

RoHS
KTC3200
KTC3200 TRANSISTOR (NPN)
FEATURE
D _{Power dissipation}
T _PCM:
0.625
W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.1
A
Collector-base voltage
V_(BR)CBO:
120
V
O _{Operating and storage junction temperature range}
C _{Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
TJ: 150℃
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA, IE=0
120
V
Collector-emitter breakdown voltage V(BR)CEO
IC= 1mA, IB=0
120
V
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 100µA, IC=0
5
V
T _{Collector cut-off current}
ICBO
VCB= 120V, IE=0
0.1
µA
C _{Emitter cut-off current}
IEBO
VEB= 5V, IC=0
0.1
µA
E _{DC current gain}
hFE
VCE=6V, IC= 2mA
200
700
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 10mA, IB= 1 mA
0.3
V
E _{Base-emitter voltage}
J _{Transition frequency}
VBE
VCE= 6V, IC= 2mA
VCE= 6 V, IC= 1mA
fT
F=30MHz
0.65
0.8
V
100
MHz
WE^{CLASSIFICATION OF hFE}
Rank
GR
BL
Range
200-400
350-700
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