KTC3199 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

RoHS
KTC3199
KTC3199 TRANSISTOR (NPN)
TO-92S
D FEATURES
Power dissipation
T _PCM:
400 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
150 mA
Collector-base voltage
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
50
V
5
V
0.1 µA
0.1 µA
70
700
0.1 0.25 V
80
MHz
2.0
3.5
pF
J ^{E Noise figure}
NF
VCE=6V, Ic=0.1mA,
f=1KHZ, Rg=10KΩ
1.0
10
dB
E_{hFE Linearity}
hFE(0.1mA)/hFE(2mA)
0.95
W^{CLASSIFICATION OF hFE(1)}
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
300-700
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