KTC2316 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

RoHS
KTC2316
KTC2316 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.9 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.8 A
Collector-base voltage
O _V(BR)CBO:
120 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
Transition frequency
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
120
V
120
V
5
V
0.1 µA
0.1 µA
60
80
240
1
V
120
MHz
30
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
W^Range
O
80-160
Y
120-240
Marking
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]