KTB1366 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

RoHS
KTB1366
TO-220F
KTB1366 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
Collector output capacitance
J _{Fall time}
E_{Storage time}
W_{CLASSIFICATION OF hFE(1)}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
tf
ts
Test conditions
Ic=-1mA, IE=0
Ic=-50mA, IB=0
IE=-1mA, IC=0
VCB=-60V, IE=0
VEB=-7V, IC=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
IC=-2A, IB1=-IB2=-0.2A
VCC=-30V
MIN TYP MAX UNIT
-60
V
-60
V
-7
V
-100 µA
-100 µA
60
200
20
-1
V
-1
V
9
MHz
150
pF
0.5
µs
1.7
µs
Rank
O
Y
Range
60-120
100-200
Marking
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